National Changhua University of Education Institutional Repository : Item 987654321/17408

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29927248 Online Users : 417

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17408

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17408

Title:	Comment on “Mechanism for the Increase of Indium-tin-oxide Work Function by O2 Inductively Coupled Plasma Treatment” [ J. Appl. Phys. 95, 586 (2004) ]
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Indium compounds;Semiconductor materials;Plasma materials processing;Surface treatment;Photoelectron spectra;Secondary electron emission;Electron affinity;Work function
Date:	2007-02
Issue Date:	2013-10-02T08:36:51Z
Publisher:	American Institute of Physics
Abstract:	A high work function on indium tin oxide (ITO) surfaces with O2 inductively coupled plasma (ICP) treatment was obtained in the paper: “Mechanism for the increase of indium tin oxide work function by O2 inductively coupled plasma treatment” [ Lee et al., J. Appl. Phys. 95, 586 (2004) ]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.
Relation:	Journal of Applied Physics, 101(3): 036104
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	603	View/Open