English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28486616      Online Users : 347
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17409

Title: Effects of (NH4)2Sx Treatment on Electrical Properties of Indium Tin Oxide/Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)
Authors: Lin, Yow-Jon;Chang, Hsing-Cheng;Liu, Bei-Yuan
Contributors: 光電科技研究所
Keywords: Conducting polymers;Indium compounds;Organic semiconductors;Interface structure
Date: 2007-03
Issue Date: 2013-10-02T08:36:52Z
Publisher: American Institute of Physics
Abstract: The effects of (NH4)2Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (NH4)2Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.
Relation: Applied Physics Letters, 90(11): 112112
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback