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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17409

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17409

Title:	Effects of (NH4)2Sx Treatment on Electrical Properties of Indium Tin Oxide/Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)
Authors:	Lin, Yow-Jon;Chang, Hsing-Cheng;Liu, Bei-Yuan
Contributors:	光電科技研究所
Keywords:	Conducting polymers;Indium compounds;Organic semiconductors;Interface structure
Date:	2007-03
Issue Date:	2013-10-02T08:36:52Z
Publisher:	American Institute of Physics
Abstract:	The effects of (NH4)2Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (NH4)2Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.
Relation:	Applied Physics Letters, 90(11): 112112
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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