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Title: Induced Increase in Surface Work Function and Surface Energy of Indium Tin Oxide-doped ZnO Films by (NH4)2Sx Treatment
Authors: Tsai, Chia-Lung;Lin, Yow-Jon;Wu, Ping-Hsun;Chen, Shu-You;Liu, Day-Shan;Hong, Jia-Huang;Liu, Chia-Jyi;Shih, Yu-Tai;Cheng, Jie-Min;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Indium compounds;Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Work function;Surface conductivity;Surface energy;Bonds (chemical);Surface treatment
Date: 2007-06
Issue Date: 2013-10-02T08:36:54Z
Publisher: American Institute of Physics
Abstract: The effects of (NH4)2Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (NH4)2Sx-treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (NH4)2Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.
Relation: Journal of Applied Physics, 101(11): 113713
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

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