National Changhua University of Education Institutional Repository : Item 987654321/17411
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6498/11670
造访人次 : 25695975      在线人数 : 103
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Induced Increase in Surface Work Function and Surface Energy of Indium Tin Oxide-doped ZnO Films by (NH4)2Sx Treatment
作者: Tsai, Chia-Lung;Lin, Yow-Jon;Wu, Ping-Hsun;Chen, Shu-You;Liu, Day-Shan;Hong, Jia-Huang;Liu, Chia-Jyi;Shih, Yu-Tai;Cheng, Jie-Min;Chang, Hsing-Cheng
贡献者: 光電科技研究所
关键词: Indium compounds;Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Work function;Surface conductivity;Surface energy;Bonds (chemical);Surface treatment
日期: 2007-06
上传时间: 2013-10-02T08:36:54Z
出版者: American Institute of Physics
摘要: The effects of (NH4)2Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (NH4)2Sx-treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (NH4)2Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.
關聯: Journal of Applied Physics, 101(11): 113713
显示于类别:[光電科技研究所] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈