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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17412

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17412

Title:	Comment on “Influence of Indium-tin-oxide Thin-film Quality on Reverse Leakage Current of Indium-tin-oxide/n-GaN Schottky Contacts” [ Appl. Phys. Lett. 89, 033503 (2006) ]
Authors:	Lin, Yow-Jon;Tsai, Chia-Lung;Liu, Day-Shan
Contributors:	光電科技研究所
Keywords:	Semiconductor thin films;Leakage currents;Schottky barriers;Vacancies (crystal);Positron annihilation;Gallium compounds;III-V semiconductors;Wide band gap semiconductors
Date:	2007-06
Issue Date:	2013-10-02T08:36:54Z
Publisher:	American Institute of Physics
Relation:	Applied Physics Letters, 90(4): 046101
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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