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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17414

Title: Comment on “p-type Behavior from Sb-doped ZnO Heterojunction Photodiodes” [ Appl. Phys. Lett. 88, 112108 (2006) ]
Authors: Lin, Yow-Jon;Wu, Ping-Hsun;Liu, Day-Shan
Contributors: 光電科技研究所
Keywords: Antimony;Fermi level;Heavily doped semiconductors;Hole density;II-VI semiconductors;Ohmic contacts;Photodiodes;p-n heterojunctions;Schottky barriers;Schottky diodes;Semiconductor thin films;Thin film devices;Valence bands;Wide band gap semiconductors;Zinc compounds
Date: 2007-09
Issue Date: 2013-10-02T08:36:56Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 91(13): 136101
Appears in Collections:[光電科技研究所] 期刊論文

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