In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.
