English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20717531      Online Users : 72
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17417

Title: Hysteresis-type Current-voltage Characteristics of Indium Tin Oxide/Poly (3,4-ethylenedioxythiophene) Doped with Poly (4-styrenesulfonate)/Indium Tin Oxide Devices
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Hysteresis;Indium compounds;Polymers;Semiconductor device testing;Ultraviolet radiation effects
Date: 2008-03
Issue Date: 2013-10-02T08:36:58Z
Publisher: American Institute of Physics
Abstract: In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.
Relation: Journal of Applied Physics, 103(6): 063702
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML410View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback