National Changhua University of Education Institutional Repository : Item 987654321/17417
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题名: Hysteresis-type Current-voltage Characteristics of Indium Tin Oxide/Poly (3,4-ethylenedioxythiophene) Doped with Poly (4-styrenesulfonate)/Indium Tin Oxide Devices
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Hysteresis;Indium compounds;Polymers;Semiconductor device testing;Ultraviolet radiation effects
日期: 2008-03
上传时间: 2013-10-02T08:36:58Z
出版者: American Institute of Physics
摘要: In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.
關聯: Journal of Applied Physics, 103(6): 063702
显示于类别:[光電科技研究所] 期刊論文

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