National Changhua University of Education Institutional Repository : Item 987654321/17418
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题名: Electronic Transport and Schottky Barrier Height of Ni Contact on p-type GaN
作者: Lin, Yow-Jon;Lee, Ching-Ting;Chang, Shih-Sheng;Chang, Hsing-Cheng
贡献者: 光電科技研究所
关键词: Electronics and devices;Semiconductors;Surfaces, interfaces and thin films
日期: 2008-04
上传时间: 2013-10-02T08:36:59Z
出版者: IOP Publishing Ltd
摘要: Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current–voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
關聯: Journal of Physics D: Applied Physics, 41(9): 095107
显示于类别:[光電科技研究所] 期刊論文


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