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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17419

Title: Effects of Mg Incorporation on the Optical Properties of ZnO Prepared by the sol-gel Method
Authors: Lin, Yow-Jon;Wu, Ping-Hsun;Tsai, Chia-Lung;Liu, Chia-Jyi;Lin, Zhi-Ru;Chang, Hsing-Cheng;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Electrical conductivity;II-VI semiconductors;Magnesium;Photoluminescence;Semiconductor doping;Semiconductor growth;Semiconductor thin films, sol-gel processing;Wide band gap semiconductors;X-ray diffraction;X-ray photoelectron spectra;Zinc compounds
Date: 2008-06
Issue Date: 2013-10-02T08:37:00Z
Publisher: American Institute of Physics
Abstract: ZnO films with and without Mg doping (Zn1−xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1−xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973Mg0.027O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.
Relation: Journal of Applied Physics, 103(11): 113709
Appears in Collections:[光電科技研究所] 期刊論文

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