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題名: Mechanisms of Enhancing Band-edge Luminescence of Zn1−x MgxO Prepared by the Sol–gel Method
作者: Lin, Yow-Jon;Wu, Ping-Hsun;Tsai, Chia-Lung;Liu, Chia-Jyi;Lee, Ching-Ting;Chang, Hsing-Cheng;Lin, Zhi-Ru;Jeng, Kai-Yi
貢獻者: 光電科技研究所
關鍵詞: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films;Condensed matter: structural, mechanical & thermal
日期: 2008-06
上傳時間: 2013-10-02T08:37:01Z
出版者: IOP Publishing Ltd
摘要: Zn1−xMgxO films prepared with different x were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1−xMgxO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1−xMgxO film.
關聯: Journal Physics D: Applied Physics, 41: 125103
顯示於類別:[光電科技研究所] 期刊論文


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