National Changhua University of Education Institutional Repository : Item 987654321/17421
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30052548      在线人数 : 622
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17421

题名: Mechanisms of Enhancing Magnetic Properties of Zn1−xCoxO Films Prepared by the Sol-gel Method
作者: Lin, Yow-Jon;Tsai, Chia-Lung;Chen, Wei-Chung;Liu, Chia-Jyi;Horng, Lance;Shih, Yu-Tai;Lin, Zhi-Ru;Wang, Jia-Feng
贡献者: 光電科技研究所
关键词: A1. Point defects;A2. Growth from solutions;B1. Zinc compounds;B2. Magnetic materials;B2. Semiconducting II-VI materials
日期: 2008-08
上传时间: 2013-10-02T08:37:02Z
出版者: Elsevier B. V.
摘要: Zn1−xCoxO films prepared with different molar ratio of cobalt acetate to zinc acetate were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Zn1−xCoxO diluted magnetic semiconductors. The authors found that the magnetic properties of the films arise from the replacement of Zn by Co in the ZnO lattice and zinc vacancies were determined in the photoluminescence band. Therefore, an increase in cobalt concentration and the number of zinc vacancies in the oxygen-rich Zn1−xCoxO film may lead to the enhancement of the magnetic properties. It is worth noting that changes in cobalt concentration and the number of zinc vacancies are important issues for producing strong ferromagnetic Zn1−xCoxO films prepared by the sol–gel method.
關聯: Journal of Crystal Growth, 310(16): 3763-3766
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML658检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈