National Changhua University of Education Institutional Repository : Item 987654321/17422
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题名: Analysis of the Band-edge Luminescence Degradation for ZnO Films with Al Doping Prepared by the Sol-gel Method
作者: Lin, Yow-Jon;Chen, Wei-Chung;Chang, Hsing-Cheng;Liu, Chia-Jyi;Lin, Zhi-Ru
贡献者: 光電科技研究所
关键词: A1. Doping;A1. Defects;A2. Growth from solutions;B2. Semiconducting II-VI materials;B1. Zinc compounds
日期: 2008-08
上传时间: 2013-10-02T08:37:02Z
出版者: Elsevier B. V.
摘要: In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.
關聯: Journal of Crystal Growth, 310(18): 4110-4114
显示于类别:[光電科技研究所] 期刊論文

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