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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17424

Title: Comment on “Valence Band Offset of ZnO/GaAs Heterojunction Measured by x-ray Photoelectron Spectroscopy” [ Appl. Phys. Lett. 92, 012104 (2008) ]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Binding energy;Fermi level;Gallium arsenide;III-V semiconductors;II-VI semiconductors;Semiconductor heterojunctions;Valence bands;Work function;X-ray photoelectron spectra;Zinc compounds
Date: 2008-08
Issue Date: 2013-10-02T08:37:04Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 93(4): 046101
Appears in Collections:[光電科技研究所] 期刊論文

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