National Changhua University of Education Institutional Repository : Item 987654321/17424
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25679190      Online Users : 63
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Comment on “Valence Band Offset of ZnO/GaAs Heterojunction Measured by x-ray Photoelectron Spectroscopy” [ Appl. Phys. Lett. 92, 012104 (2008) ]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Binding energy;Fermi level;Gallium arsenide;III-V semiconductors;II-VI semiconductors;Semiconductor heterojunctions;Valence bands;Work function;X-ray photoelectron spectra;Zinc compounds
Date: 2008-08
Issue Date: 2013-10-02T08:37:04Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 93(4): 046101
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback