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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17424

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17424

Title:	Comment on “Valence Band Offset of ZnO/GaAs Heterojunction Measured by x-ray Photoelectron Spectroscopy” [ Appl. Phys. Lett. 92, 012104 (2008) ]
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Binding energy;Fermi level;Gallium arsenide;III-V semiconductors;II-VI semiconductors;Semiconductor heterojunctions;Valence bands;Work function;X-ray photoelectron spectra;Zinc compounds
Date:	2008-08
Issue Date:	2013-10-02T08:37:04Z
Publisher:	American Institute of Physics
Relation:	Applied Physics Letters, 93(4): 046101
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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