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題名: Hysteresis Mechanism in Current–voltage Characteristics of ZrOx Films Prepared by the Sol–gel Method
作者: Lin, Yow-Jon;Chen, Wei-Chung;Chin, Yi-Min;Liu, Chia-Jyi
貢獻者: 光電科技研究所
關鍵詞: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films
日期: 2009-01
上傳時間: 2013-10-02T08:37:06Z
出版者: IOP Publishing Ltd
摘要: In the study, ZrOx films were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current–voltage characteristics of indium tin oxide/ZrOx/Au devices.
關聯: Journal of Physics D: Applied Physic, 42(4): 045419
顯示於類別:[光電科技研究所] 期刊論文

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