National Changhua University of Education Institutional Repository : Item 987654321/17426
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29937004      在线人数 : 478
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17426

题名: Hysteresis Mechanism in Current–voltage Characteristics of ZrOx Films Prepared by the Sol–gel Method
作者: Lin, Yow-Jon;Chen, Wei-Chung;Chin, Yi-Min;Liu, Chia-Jyi
贡献者: 光電科技研究所
关键词: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films
日期: 2009-01
上传时间: 2013-10-02T08:37:06Z
出版者: IOP Publishing Ltd
摘要: In the study, ZrOx films were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current–voltage characteristics of indium tin oxide/ZrOx/Au devices.
關聯: Journal of Physics D: Applied Physic, 42(4): 045419
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML694检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈