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| 題名: | High-barrier Rectifying Contacts on Undoped ZnO Films with (NH4)2Sx Treatment Owing to Fermi-level Pinning |
| 作者: | Lin, Yow-Jon;Chang, Shih-Sheng;Chang, Hsing-Cheng;Liu, Yang-Chun |
| 貢獻者: | 光電科技研究所 |
| 關鍵詞: | Condensed matter: electrical, magnetic and optical;Surfaces, interfaces and thin films |
| 日期: | 2009-03
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| 上傳時間: | 2013-10-02T08:37:07Z
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| 出版者: | IOP Publishing Ltd |
| 摘要: | We report on the formation of high-barrier Ti and Ni contacts to (NH4)2Sx-treated ZnO films grown by pulsed-laser deposition. The x-ray photoelectron spectroscopy (XPS) results show that the position of the Zn 3d core-level peak at the (NH4)2Sx-treated ZnO surface is the same as that at the Ti/(NH4)2Sx-treated ZnO or Ni/(NH4)2Sx-treated ZnO interfaces, suggesting the occurrence of Fermi-level (EF) pinning and the formation of a barrier height of ~2.7 eV. From the photoluminescence and XPS measurements, it is suggested that a high Zn-vacancy density might cause the ZnO EF to be pinned close to the Zn-vacancy defect level at approximately 0.7 eV above the valence band maximum. In addition, the discrepancy in barrier-height values obtained from XPS and current–voltage measurements suggests the formation of S–Zn surface dipoles with S atoms on the surfaces. |
| 關聯: | Journal of Physics D: Applied Physic, 42(7): 075308 |
| 顯示於類別: | [光電科技研究所] 期刊論文
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