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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17429

Title: Low-resistance Nonalloyed Ohmic Contacts on Undoped ZnO Films Grown by Pulsed-laser Deposition
Authors: Tsai, Chia-Lung;Lin, Yow-Jon;Chin, Yi-Min;Liu, W. R.;Hsieh, W. F.;Hsu, C. H.;Chu, Jian-An
Contributors: 光電科技研究所
Keywords: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films;Nanoscale science and low-D systems
Date: 2009-04
Issue Date: 2013-10-02T08:37:09Z
Publisher: IOP Publishing Ltd
Abstract: We report on the formation of nonalloyed Ti and Ni ohmic contacts to ZnO films grown by pulsed-laser deposition. The experimental results show a lower barrier height of the Ti/ZnO samples than that of the Ni/ZnO samples (due to the lower work function of Ti than Ni), suggesting the Fermi-level unpinning at the interfaces. Based on the thermionic-emission or the thermionic-field-emission model, we found weak barrier-height dependence of the contact resistivity, implying that the presence of hydroxide in ZnO (i.e. the formation of the narrow depletion region at the metal/ZnO interface) resulted in the excess current component related to tunnelling, which led to the formation of the low-resistance nonalloyed metal/ZnO contact. The measurement temperature dependence of the contact resistivity revealed that the dominant current transport mechanism is field emission.
Relation: Journal of Physics D: Applied Physic, 42(9): 095108
Appears in Collections:[光電科技研究所] 期刊論文

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