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http://ir.ncue.edu.tw/ir/handle/987654321/17429
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| Title: | Low-resistance Nonalloyed Ohmic Contacts on Undoped ZnO Films Grown by Pulsed-laser Deposition |
| Authors: | Tsai, Chia-Lung;Lin, Yow-Jon;Chin, Yi-Min;Liu, W. R.;Hsieh, W. F.;Hsu, C. H.;Chu, Jian-An |
| Contributors: | 光電科技研究所 |
| Keywords: | Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films;Nanoscale science and low-D systems |
| Date: | 2009-04
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| Issue Date: | 2013-10-02T08:37:09Z
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| Publisher: | IOP Publishing Ltd |
| Abstract: | We report on the formation of nonalloyed Ti and Ni ohmic contacts to ZnO films grown by pulsed-laser deposition. The experimental results show a lower barrier height of the Ti/ZnO samples than that of the Ni/ZnO samples (due to the lower work function of Ti than Ni), suggesting the Fermi-level unpinning at the interfaces. Based on the thermionic-emission or the thermionic-field-emission model, we found weak barrier-height dependence of the contact resistivity, implying that the presence of hydroxide in ZnO (i.e. the formation of the narrow depletion region at the metal/ZnO interface) resulted in the excess current component related to tunnelling, which led to the formation of the low-resistance nonalloyed metal/ZnO contact. The measurement temperature dependence of the contact resistivity revealed that the dominant current transport mechanism is field emission. |
| Relation: | Journal of Physics D: Applied Physic, 42(9): 095108 |
| Appears in Collections: | [光電科技研究所] 期刊論文
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