English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6469/11641
Visitors : 19733401      Online Users : 395
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17431

Title: Structural, Electrical, Optical and Magnetic Properties of Co0.2AlxZn0.8−xO Films
Authors: Tsai, Chia-Lung;Lin, Yow-Jon;Liu, Chia-Jyi;Horng, Lance;Shih, Yu-Tai;Wang, Mu-Shan;Huang, Chao-Shien;Jhang, Chuan-Sheng;Chen, Ya-Hui;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Photoluminescence;Zinc oxide;X-ray diffraction;Magnesium;Oxides
Date: 2009-06
Issue Date: 2013-10-02T08:37:10Z
Publisher: Elsevier B. V.
Abstract: Co0.2AlxZn0.8−xO films prepared with different molar ratio of aluminum nitrate to zinc acetate were deposited on substrates by the sol–gel technique. X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Co0.2AlxZn0.8−xO diluted magnetic semiconductors. The authors found that the intensity of the acceptor-related photoluminescence increased with increasing aluminum concentration and an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co0.2AlxZn0.8−xO film might lead to the enhancement of the magnetic properties. This implies that controls of the aluminum concentration and the number of the acceptor-like defects are important factors to produce strong ferromagnetism Co0.2AlxZn0.8−xO films prepared by the sol–gel method.
Relation: Applied Surface Science, 255(20): 8643-8647
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML377View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback