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题名: Electronic Transport and Schottky Barrier Heights of Pt/n-type GaN Schottky Diodes in the Extrinsic Region
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Conduction bands;Electron density;Electronic density of states;Fermi level;Gallium compounds;III-V semiconductors;Schottky diodes;Thermionic emission;Tunnelling;Wide band gap semiconductors
日期: 2009-07
上传时间: 2013-10-02T08:37:12Z
出版者: American Institute of Physics
摘要: The current-voltage characteristics of n-type GaN Schottky diodes have been measured in the extrinsic region (that is, the temperature range of 100–300 K). The effective density of states in the conduction band decreases with decreasing temperature and is close to the electron concentration at 100 K, leading to a reduction in the energy difference between the conduction band minimum and Fermi level and an increase in the probability of tunneling. Therefore, changes in the effective density of states in the conduction band and the probability of tunneling at low temperature are responsible for the decrease of the barrier height and increase in the ideality factor on the basis of the thermionic emission model. The mechanism of forward current flow has been clearly established in this study, leading to the thermionic emission (thermionic field emission) interpretation of the I-V characteristics at 300 K (100 K).
關聯: Journal of Applied Physics, 106(1): 013702
显示于类别:[光電科技研究所] 期刊論文


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