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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17434

Title: Effects of Ultraviolet Treatment on the Contact Resistivity and Electronic Transport at the Ti/ZnO Interfaces
Authors: Lin, Yow-Jon;Tsai, Chia-Lung;Liu, W. R.;Hsieh, W. F.;Hsu, C. H.;Tsao, Hou-Yen;Chu, Jian-An;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Contact resistance;Electrical resistivity;Electron density;II-VI semiconductors;Semiconductor-metal boundaries;Thermionic emission;Titanium;Wide band gap semiconductors;X-ray photoelectron spectra;Zinc compounds
Date: 2009-07
Issue Date: 2013-10-02T08:37:12Z
Publisher: American Institute of Physics
Abstract: We report on the effect of ultraviolet (UV) treatment on the specific contact resistance (ρ) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher ρ of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of ρ. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in ρ of Ti/ZnO samples.
Relation: Journal of Applied Physics, 106(1): 013701
Appears in Collections:[光電科技研究所] 期刊論文

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