National Changhua University of Education Institutional Repository : Item 987654321/17435
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30016669      在线人数 : 349
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17435

题名: Capacitance-voltage and Current-voltage Characteristics of Au Schottky Contact on n-type Si with a Conducting Polymer
作者: Lin, Yow-Jon;Huang, Bo-Chieh;Lien, Yi-Chun;Lee, Ching-Ting;Tsai, Chia-Lung;Chang, Hsing-Cheng
贡献者: 光電科技研究所
关键词: Electronics and devices;Semiconductors;Surfaces, interfaces and thin films
日期: 2009-08
上传时间: 2013-10-02T08:37:13Z
出版者: IOP Publishing Ltd
摘要: Capacitance–voltage and current–voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.
關聯: Journal of Physics D: Applied Physics, 42(16): 165104
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML693检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈