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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17437

Title: Effects of Oxygen Deficiency in the Sol-gel ZrOx Film on the Electrical Properties of Au/ZrOx/n-type Si/In Devices
Authors: Chen, Wei-Chung;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films;Condensed matter: structural, mechanical & thermal
Date: 2010-05
Issue Date: 2013-10-02T08:37:15Z
Publisher: IOP Publishing Ltd
Abstract: The ZrOx permittivity and leakage currents through Au/ZrOx/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance–voltage characteristics is attributed to the formation of the intermediate ZrSixOy layer.
Relation: Semicond. Sci. Technol., 25(5): 055003
Appears in Collections:[光電科技研究所] 期刊論文

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