The ZrOx permittivity and leakage currents through Au/ZrOx/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance–voltage characteristics is attributed to the formation of the intermediate ZrSixOy layer.
