Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/17438
|
| Title: | Current-voltage Characterization of Au Contact on Sol-gel ZnO Films with and without Conducting Polymer |
| Authors: | Lin, Yow-Jon;Jheng, Mei-Jyuan;Zeng, Jian-Jhou |
| Contributors: | 光電科技研究所 |
| Keywords: | Zinc oxide;Schottky emission;Oxides;Polymer |
| Date: | 2010-05
|
| Issue Date: | 2013-10-02T08:37:16Z
|
| Publisher: | Elsevier B. V. |
| Abstract: | This study investigates the current density–voltage (J–V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol–gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J–V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J–V relationship. |
| Relation: | Applied Surface Science, 256(14): 4493-4496 |
| Appears in Collections: | [光電科技研究所] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 921 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
