National Changhua University of Education Institutional Repository : Item 987654321/17438
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 23831576      在线人数 : 115
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Current-voltage Characterization of Au Contact on Sol-gel ZnO Films with and without Conducting Polymer
作者: Lin, Yow-Jon;Jheng, Mei-Jyuan;Zeng, Jian-Jhou
贡献者: 光電科技研究所
关键词: Zinc oxide;Schottky emission;Oxides;Polymer
日期: 2010-05
上传时间: 2013-10-02T08:37:16Z
出版者: Elsevier B. V.
摘要: This study investigates the current density–voltage (J–V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol–gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J–V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J–V relationship.
關聯: Applied Surface Science, 256(14): 4493-4496
显示于类别:[光電科技研究所] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈