English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24482572      Online Users : 70
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17440

Title: 五環素沉積於有無氧電漿處理之氧化銦錫的歐姆接觸特性分析
Pentacene Ohmic Contact on Indium Tin Oxide Surfaces with and without Oxygen Plasma Treatment
Authors: 曾建洲;朱建安;林祐仲
Contributors: 光電科技研究所
Keywords: 氧化銦錫;X光光電子能譜儀;界面;真空蒸鍍
Indium tin oxide;X-ray photoelectron spectroscopy;Interfaces;Vacuum evaporation
Date: 2010-06
Issue Date: 2013-10-02T08:37:17Z
Publisher: 臺灣真空科技學會
Abstract: 本研究討利用氧電漿處理氧化銦錫(ITO)薄膜表面後對五環素(Pentacene)歐姆交處的影響。實驗中利用傳輸線模型(Transfer Mength Lethod)求出特徵接觸電阻,並使用光譜法和電特性量測法觀測五環素/經氧電漿處理氧化銦錫以及五環素/未經氧電漿處理氧化銦錫的光電特性。實驗結果顯示,氧化銦錫經氧電漿處理後會導致五環素/氧化銦錫界面處的五環素層和氧化銦錫表面吸附的氧離子結合[及產生自我摻雜(Self-doping)效應],而使近界面處之五環素導電率升高進而降低界面接觸電阻。
Relation: 真空科技, 23(2): 20-25
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML493View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback