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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17445

Title: Enhancement of the Hole Mobility and Concentration in Pentacene by Oxygen Plasma Treatment
Authors: Lin, Chi-Shin;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Hall coefficient H110;XPS X110;Thin films T200;Organics O126
Date: 2010-11
Issue Date: 2013-10-02T08:37:21Z
Publisher: Elsevier B. V.
Abstract: X-ray photoelectron spectroscopy, atomic force microscopy and Hall-effect measurements were used to characterize the pentacene (PEN) films with and without oxygen plasma treatment. We found that the hole mobility (hole concentration) of the PEN film following oxygen plasma treatment could achieve as high as 12.3 ± 0.5 cm2 V− 1 s− 1 [(2.9 ± 0.3) × 1013 cm− 3]. This is because of the incorporation of oxygen in the PEN film and the passivation of the defects in the grain-boundary region. In addition, the use of oxygen plasma significantly improves conductivity while having no impact on surface roughness (or crystallite size).
Relation: Journal of Non-Crystalline Solids, 356(50-51): 2820-2823
Appears in Collections:[光電科技研究所] 期刊論文

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