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題名: Enhancement of the Hole Mobility and Concentration in Pentacene by Oxygen Plasma Treatment
作者: Lin, Chi-Shin;Lin, Yow-Jon
貢獻者: 光電科技研究所
關鍵詞: Hall coefficient H110;XPS X110;Thin films T200;Organics O126
日期: 2010-11
上傳時間: 2013-10-02T08:37:21Z
出版者: Elsevier B. V.
摘要: X-ray photoelectron spectroscopy, atomic force microscopy and Hall-effect measurements were used to characterize the pentacene (PEN) films with and without oxygen plasma treatment. We found that the hole mobility (hole concentration) of the PEN film following oxygen plasma treatment could achieve as high as 12.3 ± 0.5 cm2 V− 1 s− 1 [(2.9 ± 0.3) × 1013 cm− 3]. This is because of the incorporation of oxygen in the PEN film and the passivation of the defects in the grain-boundary region. In addition, the use of oxygen plasma significantly improves conductivity while having no impact on surface roughness (or crystallite size).
關聯: Journal of Non-Crystalline Solids, 356(50-51): 2820-2823
顯示於類別:[光電科技研究所] 期刊論文


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