National Changhua University of Education Institutional Repository : Item 987654321/17447
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题名: Origins of the Temperature Dependence of the Series Resistance, Ideality Factor and Barrier Height Based on the Thermionic Emission Model for n-type GaN Schottky Diodes
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Gallium nitride;Schottky contacts;Thermionic emission;Hall effect;Metal organic chemical vapor deposition
日期: 2010-11
上传时间: 2013-10-02T08:37:23Z
出版者: Elsevier B. V.
摘要: The temperature dependence of the series resistance (RS), ideality factor (η), and barrier height (ϕb) for n-type GaN Schottky diodes were studied. From the observed Hall-effect result, it is suggested that the increase of RS with increasing temperature may result from a decrease in electron mobility with increasing temperature and the increase in the effective density of states in the conduction band with increasing temperature may lead to an increase in the energy difference between the conduction band minimum and the Fermi level and a decrease in the probability of tunneling. It is shown that the tunneling behavior is responsible for decreasing ϕb and increasing η with decreasing temperature on the basis of the thermionic emission model.
關聯: Thin Solid Films, 519(2): 829-832
显示于类别:[光電科技研究所] 期刊論文

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