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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17448

Title: Leakage Conduction Mechanism of Top-contact Organic Thin Film Transistors
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Organic semiconductor;Leakage conduction;Schottky emission;Organic thin film transistors
Date: 2010-12
Issue Date: 2013-10-02T08:37:24Z
Publisher: Elsevier B. V.
Abstract: This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
Relation: Synthetic Metals, 160(23-24): 2628-2630
Appears in Collections:[光電科技研究所] 期刊論文

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