National Changhua University of Education Institutional Repository : Item 987654321/17448

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30037706 Online Users : 632

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17448

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17448

Title:	Leakage Conduction Mechanism of Top-contact Organic Thin Film Transistors
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Organic semiconductor;Leakage conduction;Schottky emission;Organic thin film transistors
Date:	2010-12
Issue Date:	2013-10-02T08:37:24Z
Publisher:	Elsevier B. V.
Abstract:	This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
Relation:	Synthetic Metals, 160(23-24): 2628-2630
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	606	View/Open