National Changhua University of Education Institutional Repository : Item 987654321/17448
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题名: Leakage Conduction Mechanism of Top-contact Organic Thin Film Transistors
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Organic semiconductor;Leakage conduction;Schottky emission;Organic thin film transistors
日期: 2010-12
上传时间: 2013-10-02T08:37:24Z
出版者: Elsevier B. V.
摘要: This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.
關聯: Synthetic Metals, 160(23-24): 2628-2630
显示于类别:[光電科技研究所] 期刊論文

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