In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
關聯:
Solar Energy Materials and Solar Cells, 94(12): 2154-2157