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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17449

Title: Effects of Ultraviolet Treatment on the Photovoltaic Property of Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-type Si Diodes
Authors: Chin, Yi-Min;Lin, Jung-Chung;Lin, Yow-Jon;Wu, Kuo-Chen
Contributors: 光電科技研究所
Keywords: Diode;Polymer;Si;Surface treatment
Date: 2010-12
Issue Date: 2013-10-02T08:37:25Z
Publisher: Elsevier B. V.
Abstract: In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
Relation: Solar Energy Materials and Solar Cells, 94(12): 2154-2157
Appears in Collections:[光電科技研究所] 期刊論文

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