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題名: Effects of Ultraviolet Treatment on the Photovoltaic Property of Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-type Si Diodes
作者: Chin, Yi-Min;Lin, Jung-Chung;Lin, Yow-Jon;Wu, Kuo-Chen
貢獻者: 光電科技研究所
關鍵詞: Diode;Polymer;Si;Surface treatment
日期: 2010-12
上傳時間: 2013-10-02T08:37:25Z
出版者: Elsevier B. V.
摘要: In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
關聯: Solar Energy Materials and Solar Cells, 94(12): 2154-2157
顯示於類別:[光電科技研究所] 期刊論文


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