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题名: Leakage Currents Through In/MgO/n-type Si/In Structures
作者: Tsao, Hou-Yen;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng
贡献者: 光電科技研究所
关键词: A. Thin films;A. Semicoductors;C. Point defects
日期: 2011-05
上传时间: 2013-10-02T08:37:26Z
出版者: Elsevier B. V.
摘要: Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (Poole–Frenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and Poole–Frenkel emissions is due to the formation of intermediate MgSixOy layer.
關聯: Solid State Communications, 151(9): 693-696
显示于类别:[光電科技研究所] 期刊論文


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