National Changhua University of Education Institutional Repository : Item 987654321/17451
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題名: Leakage Currents Through In/MgO/n-type Si/In Structures
作者: Tsao, Hou-Yen;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng
貢獻者: 光電科技研究所
關鍵詞: A. Thin films;A. Semicoductors;C. Point defects
日期: 2011-05
上傳時間: 2013-10-02T08:37:26Z
出版者: Elsevier B. V.
摘要: Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (Poole–Frenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and Poole–Frenkel emissions is due to the formation of intermediate MgSixOy layer.
關聯: Solid State Communications, 151(9): 693-696
顯示於類別:[光電科技研究所] 期刊論文

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