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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17455

Title: Effects of Na Content on the Luminescence Behavior, Conduction Type, and Crystal Structure of Na-doped ZnO Films
Authors: Lai, Jian-Jhong;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng;Liu, Chia-Jyi;Zou, Yi-Yan;Shih, Yu-Tai;Wang, Meng-Chieh
Contributors: 光電科技研究所
Keywords: Charge compensation;Chemical exchanges;Crystal structure;Doping profiles;Electrical conductivity;Hole density;II-VI semiconductors;Impurity states;Internal stresses;Photoluminescence;Semiconductor doping;Semiconductor thin films;Sodium;Sol-gel processing;Vacancies (crystal);Wide band gap semiconductors;Zinc compounds
Date: 2011-07
Issue Date: 2013-10-02T08:37:29Z
Publisher: American Institute of Physics
Abstract: This study investigates the effect of Na content on the structural, optical, and electrical properties of sol-gel Na-doped ZnO films using x-ray diffraction, photoluminescence, and conductivity measurements. It is shown that a p-type conversion of the Na-doped ZnO film might be due to a combined effect of the increased substitutional-Na density and the decreased oxygen-vacancy (VO) density. However, excess Na incorporation into ZnO shows an ambiguous carrier type due to the increase in the donorlike VO density. These results indicate that compensation effects limit the hole concentration in the Na-doped ZnO films. In addition, when more Na is substituted into the ZnO system, the difference in the ionic radii of Zn2+ and Na+ starts playing an increasingly important role, causing the presence of tensile stress in the Na-doped ZnO film.
Relation: Journal of Applied Physics, 110(1): 013704
Appears in Collections:[光電科技研究所] 期刊論文

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