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題名: Effects of Na Content on the Luminescence Behavior, Conduction Type, and Crystal Structure of Na-doped ZnO Films
作者: Lai, Jian-Jhong;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng;Liu, Chia-Jyi;Zou, Yi-Yan;Shih, Yu-Tai;Wang, Meng-Chieh
貢獻者: 光電科技研究所
關鍵詞: Charge compensation;Chemical exchanges;Crystal structure;Doping profiles;Electrical conductivity;Hole density;II-VI semiconductors;Impurity states;Internal stresses;Photoluminescence;Semiconductor doping;Semiconductor thin films;Sodium;Sol-gel processing;Vacancies (crystal);Wide band gap semiconductors;Zinc compounds
日期: 2011-07
上傳時間: 2013-10-02T08:37:29Z
出版者: American Institute of Physics
摘要: This study investigates the effect of Na content on the structural, optical, and electrical properties of sol-gel Na-doped ZnO films using x-ray diffraction, photoluminescence, and conductivity measurements. It is shown that a p-type conversion of the Na-doped ZnO film might be due to a combined effect of the increased substitutional-Na density and the decreased oxygen-vacancy (VO) density. However, excess Na incorporation into ZnO shows an ambiguous carrier type due to the increase in the donorlike VO density. These results indicate that compensation effects limit the hole concentration in the Na-doped ZnO films. In addition, when more Na is substituted into the ZnO system, the difference in the ionic radii of Zn2+ and Na+ starts playing an increasingly important role, causing the presence of tensile stress in the Na-doped ZnO film.
關聯: Journal of Applied Physics, 110(1): 013704
顯示於類別:[光電科技研究所] 期刊論文


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