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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17456

Title: Current–voltage Characteristics of AlCdO Schottky Contact on the Polished and Unpolished p-type Si Surfaces with and without Light Illumination
Authors: Tsai, Chia-Lung;Tsai, Cheng-Lung;He, Guan-Ru;Su, Ting-Hong;You, Chang-Feng;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Si;Transparent conductive oxide;Schottky diode;Thermionic emission
Date: 2011-07
Issue Date: 2013-10-02T08:37:30Z
Publisher: Elsevier B. V.
Abstract: In this study, the current–voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.
Relation: Solid-State Electronics, 61(1): 116-120
Appears in Collections:[光電科技研究所] 期刊論文

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