National Changhua University of Education Institutional Repository : Item 987654321/17457
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题名: Effect of the Induced Electron Traps by Oxygen Plasma Treatment on Transfer Characteristics of Organic Thin Film Transistors
作者: Huang, Bo-Chieh;Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Electron mobility;Electron traps;Grain boundaries;Organic semiconductors;Passivation;Plasma materials processing;Thin film transistors
日期: 2011-09
上传时间: 2013-10-02T08:37:31Z
出版者: American Institute of Physics
摘要: The effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors (OTFTs) was researched in this study. From the observed result, the relationship between electron trapping and electrical stability of OTFTs was discussed. It is shown that oxygen plasma treatment may lead to a shift of the threshold voltage towards positive gate-source voltages and an increase in the mobility, resulting from the incorporation of oxygen and the passivation of the defects in the grain-boundary region. It is found that the electrical stability mainly arises from the increased long-lifetime electron-trap density.
關聯: Applied Physics Letters, 99(11): 113301
显示于类别:[光電科技研究所] 期刊論文

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