National Changhua University of Education Institutional Repository : Item 987654321/17462

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29947472 Online Users : 578

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17462

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17462

Title:	Photocurrent Stability and Responsivity in the n-type Si/ZnO-doped Conducting Polymer Photovoltaic Device
Authors:	Lin, Yow-Jon;Su, Ting-Hong;Lin, Jung-Chung;Su, Yu-Chao
Contributors:	光電科技研究所
Keywords:	Polymer;Photoresponse;ZnO;Si;Conductivity;Defect
Date:	2012-03
Issue Date:	2013-10-02T08:37:36Z
Publisher:	Elsevier B. V.
Abstract:	In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-typeSi/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrentstability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.
Relation:	Synthetic Metals, 162(3-4): 406-409
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	673	View/Open