National Changhua University of Education Institutional Repository : Item 987654321/17462
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題名: Photocurrent Stability and Responsivity in the n-type Si/ZnO-doped Conducting Polymer Photovoltaic Device
作者: Lin, Yow-Jon;Su, Ting-Hong;Lin, Jung-Chung;Su, Yu-Chao
貢獻者: 光電科技研究所
關鍵詞: Polymer;Photoresponse;ZnO;Si;Conductivity;Defect
日期: 2012-03
上傳時間: 2013-10-02T08:37:36Z
出版者: Elsevier B. V.
摘要: In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-typeSi/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrentstability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.
關聯: Synthetic Metals, 162(3-4): 406-409
顯示於類別:[光電科技研究所] 期刊論文

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