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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17463

Title: Current Transport Mechanism of Heterojunction Diodes Based on the Reduced Graphene Oxide-based Polymer Composite and n-type Si
Authors: Lin, Jian-Huang;Zeng, Jian-Jhou;Su, Yu-Chao;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Composite materials;Dark conductivity;Doping;Elemental semiconductors;Graphene;Photoconductivity;Photoemission;Polymers;Semiconductor diodes;Silicon
Date: 2012-04
Issue Date: 2013-10-02T08:37:37Z
Publisher: American Institute of Physics
Abstract: The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on n-type Si and poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). This heterojunction diode showed a good rectifying behavior with an ideality factor of 1.2. A photocurrent decay model is presented that addresses the charge trapping effect and doping mechanisms for composite PEDOT:PSS films having RGO sheets. The enhanced dark conductivity was observed by incorporating RGO into PEDOT:PSS. For heterojunction diodes, the high photocurrent density originates from efficient hole transport combined with electron trapping with long-second lifetime.
Relation: Applied Physics Letters, 100(15): 153509
Appears in Collections:[光電科技研究所] 期刊論文

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