English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20717166      Online Users : 253
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17464

Title: Modification of the Electrical Properties of Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate) upon Doping of ZnO Nanoparticles of Different Content
Authors: Lin, Yow-Jon;Su, Yu-Chao
Contributors: 光電科技研究所
Keywords: Conducting polymers;Dark conductivity;Doping;Electron traps;II-VI semiconductors;Nanocomposites;Nanoparticles;Photoconductivity;Polymer films;Wide band gap semiconductors;Zinc compounds
Date: 2012-04
Issue Date: 2013-10-02T08:37:38Z
Publisher: American Institute of Physics
Abstract: A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.
Relation: Journal of Applied Physics, 111(7): 073712
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML503View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback