English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29709686      線上人數 : 411
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17464

題名: Modification of the Electrical Properties of Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate) upon Doping of ZnO Nanoparticles of Different Content
作者: Lin, Yow-Jon;Su, Yu-Chao
貢獻者: 光電科技研究所
關鍵詞: Conducting polymers;Dark conductivity;Doping;Electron traps;II-VI semiconductors;Nanocomposites;Nanoparticles;Photoconductivity;Polymer films;Wide band gap semiconductors;Zinc compounds
日期: 2012-04
上傳時間: 2013-10-02T08:37:38Z
出版者: American Institute of Physics
摘要: A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.
關聯: Journal of Applied Physics, 111(7): 073712
顯示於類別:[光電科技研究所] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML801檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋