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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17466

Title: Effects of Dry Oxidation of Heavily Doped p-type Si on Output and Transfer Characteristics in Organic Thin Film Transistors
Authors: Tsai, Ming-Ying;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Gate leakage;Organic thin film transistor;Defect;Oxide
Date: 2012-08
Issue Date: 2013-10-02T08:37:39Z
Publisher: Elsevier B. V.
Abstract: This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
Relation: Microelectronic Engineering, 96: 24-28
Appears in Collections:[光電科技研究所] 期刊論文

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