National Changhua University of Education Institutional Repository : Item 987654321/17466
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28670987      Online Users : 279
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Effects of Dry Oxidation of Heavily Doped p-type Si on Output and Transfer Characteristics in Organic Thin Film Transistors
Authors: Tsai, Ming-Ying;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Gate leakage;Organic thin film transistor;Defect;Oxide
Date: 2012-08
Issue Date: 2013-10-02T08:37:39Z
Publisher: Elsevier B. V.
Abstract: This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
Relation: Microelectronic Engineering, 96: 24-28
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback