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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17466

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17466

Title:	Effects of Dry Oxidation of Heavily Doped p-type Si on Output and Transfer Characteristics in Organic Thin Film Transistors
Authors:	Tsai, Ming-Ying;Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Gate leakage;Organic thin film transistor;Defect;Oxide
Date:	2012-08
Issue Date:	2013-10-02T08:37:39Z
Publisher:	Elsevier B. V.
Abstract:	This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
Relation:	Microelectronic Engineering, 96: 24-28
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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