National Changhua University of Education Institutional Repository : Item 987654321/17466
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题名: Effects of Dry Oxidation of Heavily Doped p-type Si on Output and Transfer Characteristics in Organic Thin Film Transistors
作者: Tsai, Ming-Ying;Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Gate leakage;Organic thin film transistor;Defect;Oxide
日期: 2012-08
上传时间: 2013-10-02T08:37:39Z
出版者: Elsevier B. V.
摘要: This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
關聯: Microelectronic Engineering, 96: 24-28
显示于类别:[光電科技研究所] 期刊論文

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