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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17475

Title: 有機光電半導體表面與界面物理研究
Organic Semiconductor Surfaces and Interfaces Study
Authors: 林祐仲
Contributors: 光電科技研究所
Keywords: 有機半導體;高分子聚合物;功函數;極化;無機半導體;能帶結構
Organic semiconductor;Polymer;Work function;Dipole;Inorganic semiconductor;Band structure
Date: 2009-08
Issue Date: 2013-10-02T08:38:34Z
Publisher: 行政院國家科學委員會
Abstract: 有機半導體材料近來被廣泛應用於光電與微電子元件製作,基於此類相關元件特性改善必須深入了解有機-有機半導體界面、無機-有機半導體界面、電極-有機半導體界面和有機半導體表面等物理特性。然而,關於有機-有機半導體界面、無機-有機半導體界面、電極-有機半導體界面和有機半導體表面等物理特性截至目前已報導之研究成果並不十分完備,對於界面物理特性(例如:能帶彎曲、界面能帶結構、界面位障高度和極化影響等)與載子於界面傳輸機制(例如: 熱游子放射、擴散、Fowler-Nordheim 穿遂、陷阱電荷限制電流和空間電荷限制電流等理論模式)也不全然被了解,因此,本計畫重點便是深入研究有機-有機半導體界面、無機-有機半導體界面、電極-有機半導體界面和有機半導體表面物理特性,建立界面能帶架構以及載子通過這些界面的傳輸機制,並進一步探討造成遲滯電流-電壓曲線的原因。
Organic semiconductors are promising candidates for future electronic and photonic devices. Thus the elucidation of the interfacial electronic structure forms the basis for understanding and improving the performance of these devices. In particular, the organic-organic semiconductor, organic-inorganic semiconductor, and electrode-organic semiconductor interfaces have attracted much interest in relation to the rapid development of the organic-based devices. Very little is known about the band structure, the band bending, dipole, and the carrier injection mechanism at the interfaces. The unclear interfacial properties shall be further investigated. In this plan, we are devoted to the study of the band structure, dipole and the band bending at the organic-organic semiconductor, organic-inorganic semiconductor, or electrode-organic semiconductor interfaces and providing the physical models (i.e., thermionic emission, diffusion, Fowler-Nordheim tunneling, trap-charge limited currents and space-charge limited currents models) for the carrier transport at these interfaces.
Relation: 計畫編號: NSC97-2628-M018-001-MY3; 研究期間: 9808-9907
Appears in Collections:[光電科技研究所] 國科會計畫

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